| TIPO | DESCRIPCIÓN |
|---|---|
| Categoría | FET, MOSFET |
| Fabricante | Diodes Incorporated |
| Serie | - |
| Estado del producto | Obsolete |
| Paquete | Cinta y rollo (TR) |
| Embalaje / Caja | 8-SOIC (0.154", 3.90mm Width) |
| Tipo de instalación | Instalación de superficie |
| Configuration | N and P-Channel Complementary |
| Temperatura de funcionamiento | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.1W |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 5.2A (Ta), 4.7A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 770pF @ 40V, 1000pF @ 20V |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 4.5A, 10V, 60mOhm @ 3.8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250mA (Min) |
| Paquetes de equipos de proveedores | 8-SO |
| ATRIBUTO | DESCRIPCIÓN |
|---|---|
| Estado de RoHS | ROHS3 Compliant |
| Nivel de detección de humedad (MSL) | 1 (Unlimited) |
| Estado CUMPLIDO | Reach unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
