.jpg)
| TIPO | DESCRIPCIÓN |
|---|---|
| Categoría | FET simple, MOSFET |
| Fabricante | Toshiba Semiconductor and Storage |
| Serie | DTMOSIV |
| Estado del producto | Activo |
| Paquete | Tubo |
| Embalaje / Caja | TO-3P-3, SC-65-3 |
| Tipo de instalación | Through Hole |
| Temperatura de funcionamiento | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 38.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 19.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 270W (Tc) |
| Vgs(th) (Max) @ Id | 3.7V @ 1.9mA |
| Paquetes de equipos de proveedores | TO-3P(N) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4100 pF @ 300 V |
| ATRIBUTO | DESCRIPCIÓN |
|---|---|
| Estado de RoHS | ROHS3 Compliant |
| Nivel de detección de humedad (MSL) | 1 (Unlimited) |
| Estado CUMPLIDO | Reach unknown |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| CANTIDAD | PRECIO POR UNIDAD | PRECIO EXT. |
|---|---|---|
| 1 | $10.31 | $10.31 |
| 10 | $8.839 | $88.39 |
| 100 | $7.3659 | $736.59 |
| 500 | $6.49936 | $3249.68 |
| 1000 | $5.84942 | $5849.42 |
| Número mínimo de pedidos：1 | ||
